|
| | Issue Date | Title | Author(s) | Journal |
| 1 | 1-Sep-2024 | 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance | Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina | IEEE Transactions on Electron Devices |
| 2 | 5-Aug-2024 | 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance | Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina | IEEE Transactions on Electron Devices |
| 3 | 13-Jan-2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos | IEEE Transactions on Industry Applications |
| 4 | 2024 | An Enhanced Model Predictive Torque Control With Online Loss Minimization Tracking for SPMSM Drive | Wang, Sunbo ; Rivera, Marco ; Gerada, Chris ; Wheeler, Patrick ; Lophitis, Neophytos | IEEE Transactions on Industrial Electronics |
| 5 | 2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos | IEEE Transactions on Industry Applications |
| 6 | 2024 | The First Optimisation of a 16 kV 4H-SiC N-Type IGCT | Qin, Ze Cao ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Antoniou, Marina ; Mawby, Phil Andrew ; Lophitis, Neophytos | Solid State Phenomena |
| 7 | 1-May-2023 | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos | Key Engineering Materials |
| 8 | 11-Oct-2021 | 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations | Arvanitopoulos, Anastasios ; Antoniou, Marina ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos ; Lophitis, Neophytos | IEEE Transactions on Industry Applications |
| 9 | 1-Sep-2021 | Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Antoniou, Marina ; Lophitis, Neophytos | IEEE Transactions on Industry Applications |
| 10 | 1-Mar-2020 | A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos | IEEE Journal of Emerging and Selected Topics in Power Electronics |
| 11 | 1-Jul-2019 | On the broken rotor bar diagnosis using time-frequency analysis: 'Is one spectral representation enough for the characterisation of monitored signals?' | Panagiotou, Panagiotis A. ; Arvanitakis, Ioannis ; Lophitis, Neophytos ; Antonino-Daviu, Jose A. ; Gyftakis, Konstantinos N. | IET Electric Power Applications |
| 12 | 1-Feb-2019 | Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area | Antoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Rahimo, M. ; Vemulapati, U. ; Corvasce, C. ; Badstuebner, U. | IEEE Electron Device Letters |
| 13 | 2019 | Deep p-ring trench termination | Antoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Rahimo, Munaf T. ; Vemulapati, Umamaheswara Reddy ; Corvarsce, Ciara ; Badstuebner, Uwe | IEEE Electron Device Letters |
| 14 | 1-Sep-2018 | Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability | Lophitis, N. ; Antoniou, M. ; Vemulapati, U. ; Vobecky, J. ; Badstuebner, U. ; Wikstroem, T. ; Stiasny, T. ; Rahimo, M. ; Udrea, F. | IEEE Electron Device Letters |
| 15 | 22-Jun-2017 | On the Investigation of the "anode Side" SuperJunction IGBT Design Concept | Antoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe | IEEE Electron Device Letters |
| 16 | 1-Apr-2016 | New bi-mode gate-commutated thyristor design concept for high-current controllability and low ON-state voltage drop | Lophitis, Neophytos ; Antoniou, M. ; Vemulapati, U. ; Arnold, M. ; Nistor, I. ; Vobecky, J. ; Rahimo, M. ; Udrea, F. | IEEE Electron Device Letters |
| 17 | 1-Aug-2015 | Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors | Antoniou, M. ; Lophitis, Neophytos ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F. | IEEE Electron Device Letters |
| 18 | 28-Jun-2013 | Gate commutated thyristor with voltage independent maximum controllable current | Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Nistor, Iulian ; Rahimo, Munaf T. ; Arnold, Martin ; Wikstroem, Tobias ; Vobecky, Jan | IEEE Electron Device Letters |
