Journals IEEE Electron Device Letters

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IEEE Electron Device Letters

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Results 1-7 of 7 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
11-Feb-2019Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon AreaAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Rahimo, M. ; Vemulapati, U. ; Corvasce, C. ; Badstuebner, U. 
22019Deep p-ring trench terminationAntoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Rahimo, Munaf T. ; Vemulapati, Umamaheswara Reddy ; Corvarsce, Ciara ; Badstuebner, Uwe 
31-Sep-2018Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllabilityLophitis, N. ; Antoniou, M. ; Vemulapati, U. ; Vobecky, J. ; Badstuebner, U. ; Wikstroem, T. ; Stiasny, T. ; Rahimo, M. ; Udrea, F. 
422-Jun-2017On the Investigation of the "anode Side" SuperJunction IGBT Design ConceptAntoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe 
51-Apr-2016New bi-mode gate-commutated thyristor design concept for high-current controllability and low ON-state voltage dropLophitis, Neophytos ; Antoniou, M. ; Vemulapati, U. ; Arnold, M. ; Nistor, I. ; Vobecky, J. ; Rahimo, M. ; Udrea, F. 
61-Aug-2015Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar TransistorsAntoniou, M. ; Lophitis, Neophytos ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F. 
728-Jun-2013Gate commutated thyristor with voltage independent maximum controllable currentLophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Nistor, Iulian ; Rahimo, Munaf T. ; Arnold, Martin ; Wikstroem, Tobias ; Vobecky, Jan