Journals IEEE Electron Device Letters

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IEEE Electron Device Letters

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Results 1-3 of 3 (Search time: 0.001 seconds).

Issue DateTitleAuthor(s)
11-Feb-2019Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon AreaAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Rahimo, M. ; Vemulapati, U. ; Corvasce, C. ; Badstuebner, U. 
222-Jun-2017On the Investigation of the "anode Side" SuperJunction IGBT Design ConceptAntoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe 
31-Aug-2015Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar TransistorsAntoniou, M. ; Lophitis, Neophytos ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F.