Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33668
Title: Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability
Authors: Lophitis, N. 
Antoniou, M. 
Vemulapati, U. 
Vobecky, J. 
Badstuebner, U. 
Wikstroem, T. 
Stiasny, T. 
Rahimo, M. 
Udrea, F. 
Major Field of Science: Engineering and Technology
Keywords: Full wafer modeling;gate commutated thyristor;maximum controllable current;MCC;reverse conducting
Issue Date: 1-Sep-2018
Source: IEEE Electron Device Letters, 2018, Volume 39, Issue 9, Pages 1342 - 1345
Volume: 39
Issue: 9
Start page: 598
End page: 602
Journal: IEEE Electron Device Letters 
Abstract: The bi-mode gate commutated thyristor (GCT) is an advanced reverse conducting device aiming high-power applications. Due to the high degree of interdigitation of diode parts and GCT parts, it is necessary to investigate how to best separate the two and at the same time, how to maximize the individual power handling capability. This work underpins the latter, for the GCT part. In achieving that, this letter details the optimization direction, identifies the design parameters that influence the maximum controllable current (MCC), and thereafter introduces a new design attribute, the 'p-zone.' This new design not only improves the MCC at high temperature but also at low temperature, yielding temperature independent current handling capability and at least 1000 A, or 23.5% of improvement compared to the state-of-the-art. As a result, the proposed design constitutes an enabler for optimally designed bi-mode devices rated at least 5000 A for applications with the highest power requirement.
URI: https://hdl.handle.net/20.500.14279/33668
ISSN: 07413106
DOI: 10.1109/LED.2018.2847050
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Type: Article
Affiliation : Coventry University 
University of Cambridge 
ABB Switzerland Ltd., Corporate Research 
ABB Switzerland Ltd., Semiconductors 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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