Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/33801
Title: | Gate commutated thyristor with voltage independent maximum controllable current |
Authors: | Lophitis, Neophytos Antoniou, Marina Udrea, Florin Nistor, Iulian Rahimo, Munaf T. Arnold, Martin Wikstroem, Tobias Vobecky, Jan |
Major Field of Science: | Engineering and Technology |
Keywords: | Gate commutated thyristor;maximum controllable current;safe operating area;thyristor;wafer modeling |
Issue Date: | 28-Jun-2013 |
Source: | IEEE Electron Device Letters, 2013, vol. 34, iss. 8, pp. 954 - 956 |
Volume: | 34 |
Issue: | 8 |
Start page: | 954 |
End page: | 956 |
Journal: | IEEE Electron Device Letters |
Abstract: | In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. © 1980-2012 IEEE. |
URI: | https://hdl.handle.net/20.500.14279/33801 |
ISSN: | 07413106 |
DOI: | 10.1109/LED.2013.2267552 |
Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International |
Type: | Article |
Affiliation : | University of Cambridge ABB Switzerland Ltd., Corporate Research ABB Switzerland Ltd., Semiconductors |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
Files in This Item:
File | Description | Size | Format | |
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Gate_Commutated_Thyristor_With_Voltage_Independent_Maximum_Controllable_Current.pdf | 961.54 kB | Adobe PDF | View/Open |
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