Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33801
Title: Gate commutated thyristor with voltage independent maximum controllable current
Authors: Lophitis, Neophytos 
Antoniou, Marina 
Udrea, Florin 
Nistor, Iulian 
Rahimo, Munaf T. 
Arnold, Martin 
Wikstroem, Tobias 
Vobecky, Jan 
Major Field of Science: Engineering and Technology
Keywords: Gate commutated thyristor;maximum controllable current;safe operating area;thyristor;wafer modeling
Issue Date: 28-Jun-2013
Source: IEEE Electron Device Letters, 2013, vol. 34, iss. 8, pp. 954 - 956
Volume: 34
Issue: 8
Start page: 954
End page: 956
Journal: IEEE Electron Device Letters 
Abstract: In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. © 1980-2012 IEEE.
URI: https://hdl.handle.net/20.500.14279/33801
ISSN: 07413106
DOI: 10.1109/LED.2013.2267552
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Type: Article
Affiliation : University of Cambridge 
ABB Switzerland Ltd., Corporate Research 
ABB Switzerland Ltd., Semiconductors 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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