ABB Switzerland Ltd., Semiconductors

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		Issue Date	Title	Author(s)	Journal
	1	1-Sep-2018	Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability	Lophitis, N. ; Antoniou, M. ; Vemulapati, U. ; Vobecky, J. ; Badstuebner, U. ; Wikstroem, T. ; Stiasny, T. ; Rahimo, M. ; Udrea, F.	IEEE Electron Device Letters
	2	1-Feb-2019	Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area	Antoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Rahimo, M. ; Vemulapati, U. ; Corvasce, C. ; Badstuebner, U.	IEEE Electron Device Letters