Results 1-20 of 21 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
113-Jan-2024Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness EnhancementAlmpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos 
2Sep-2022The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristorCao, Qinze ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Zhang, Luyang ; Baker, Guy ; Antoniou, Marina ; Lophitis, Neophytos 
31-Jan-2022Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBTAlmpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos 
41-Jan-2022On the 3C-SiC/SiO<inf>2</inf>n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltageLophitis, Neophytos ; Arvanitopoulos, Anastasios ; Jennings, Mike R. ; Mawby, Philip A. ; Antoniou, Marina 
511-Oct-20213C-SiC-on-Si MOSFETs: Overcoming Material Technology LimitationsArvanitopoulos, Anastasios ; Antoniou, Marina ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos ; Lophitis, Neophytos 
61-Sep-2020Integrated Gate Commutated Thyristor: From Trench to PlanarVemulapati, Umamaheswara ; Stiasny, Thomas ; Wikstrom, Tobias ; Lophitis, Neophytos ; Udrea, Florin 
71-Mar-2020A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier DiodesArvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos 
81-Sep-2019Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier DiodesArvanitopoulos, A. ; Li, F. ; Jennings, M. R. ; Perkins, S. ; Gyftakis, K. N. ; Antoniou, M. ; Mawby, Philip ; Lophitis, Neophytos 
91-Aug-2019Frequency Extraction of Current Signal Spectral Components: A New Tool for the Detection of Rotor Electrical Faults in Induction MotorsPanagiotou, P. A. ; Arvanitakis, I. ; Lophitis, Neophytos ; Gyftakis, K. N. 
101-May-2019Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraintsTiwari, Amit K. ; Udrea, Florin ; Lophitis, Neophytos ; Antoniou, Marina 
111-Feb-2019Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon AreaAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Rahimo, M. ; Vemulapati, U. ; Corvasce, C. ; Badstuebner, U. 
122019Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive ConditionsStocker, Richard ; Mumtaz, Asim ; Lophitis, Neophytos 
1325-Oct-2018FEM Study of Induction Machines Suffering from Rotor Electrical Faults Using Stray Flux Signature AnalysisPanagiotou, P. A. ; Arvanitakis, I. ; Lophitis, Neophytos ; Gyftakis, K. N. 
1424-Oct-2018Analysis of stray flux spectral components in induction machines under rotor bar breakages at various locationsPanagiotou, P. A. ; Arvanitakis, I. ; Lophitis, Neophytos ; Antonino-Daviu, J. A. ; Gyftakis, K. N. 
151-May-2018On the Static Performance of Commercial GaN-on-Si Devices at Elevated TemperaturesPerkins, S. ; Arvanitopoulos, A. ; Gyftakis, K. N. ; Lophitis, Neophytos 
1622-Jun-2017On the Investigation of the "anode Side" SuperJunction IGBT Design ConceptAntoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe 
172017A comprehensive comparison of the static performance of commercial GaN-on-Si devicesPerkins, S. ; Arvanitopoulos, A. ; Gyftakis, K. N. ; Lophitis, Neophytos 
1825-Jul-20164.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anodeLophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan 
191-Aug-2015Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar TransistorsAntoniou, M. ; Lophitis, Neophytos ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F. 
2012-Jun-2015Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction lossesAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M.