Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT
Date Issued
January 1, 2022
DOI
10.1109/WiPDAEurope55971.2022.9936475
Abstract
This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations evaluate the IGBT short-circuit behaviour under various conditions and device parameters variation. The internal device current density and temperature distribution show that the parasitic thyristor latch-up and the thermally-assisted leakage current generation can be the failure mechanism of SiC nIGBT when the device temperature in the p-well/n-emitter interface region is about 1500K.
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Final - Short Circuit Performance Investigation of 10kV_ Rated SiC n-IGBT.pdf
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