Issue Date Title Author(s) 21 1-May-2019 Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints Tiwari, Amit K. 22 1-Feb-2019 Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area Antoniou, M. 23 2019 Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive Conditions Stocker, Richard 24 2019 Deep p-ring trench termination Antoniou, Marina 25 25-Oct-2018 FEM Study of Induction Machines Suffering from Rotor Electrical Faults Using Stray Flux Signature Analysis Panagiotou, P. A. 26 24-Oct-2018 Analysis of stray flux spectral components in induction machines under rotor bar breakages at various locations Panagiotou, P. A. 27 1-Sep-2018 Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability Lophitis, N. 28 1-May-2018 On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures Perkins, S. 29 22-Jun-2017 On the Investigation of the "anode Side" SuperJunction IGBT Design Concept Antoniou, Marina 30 2017 A comprehensive comparison of the static performance of commercial GaN-on-Si devices Perkins, S. 31 25-Jul-2016 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode Lophitis, Neophytos 32 1-Apr-2016 New bi-mode gate-commutated thyristor design concept for high-current controllability and low ON-state voltage drop Lophitis, Neophytos 33 1-Aug-2015 Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors Antoniou, M. 34 12-Jun-2015 Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses Antoniou, M. 35 2014 The Stripe Fortified GCT: A new GCT design for maximizing the controllable current Lophitis, Neophytos 36 28-Jun-2013 Gate commutated thyristor with voltage independent maximum controllable current Lophitis, Neophytos 
