Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints

Tiwari, Amit K.; Udrea, Florin; Lophitis, Neophytos; Antoniou, Marina

doi:10.1109/ISPSD.2019.8757586

Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/32775

Title:	Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints
Authors:	Tiwari, Amit K. Udrea, Florin Lophitis, Neophytos Antoniou, Marina
Major Field of Science:	Engineering and Technology
Keywords:	Elevated Temperatures;HVDC and Smart Grid;SiC IGBT;Ultra-high voltage
Issue Date:	1-May-2019
Source:	Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2019, Volume 2019-May, Pages 175 - 178
Volume:	2019-May
Start page:	175
End page:	178
Conference:	International Symposium on Power Semiconductor Devices and ICs
Abstract:	State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.
URI:	https://hdl.handle.net/20.500.14279/32775
ISBN:	[9781728105796]
ISSN:	10636854
DOI:	10.1109/ISPSD.2019.8757586
Rights:	Attribution-NonCommercial-NoDerivatives 4.0 International
Type:	Conference Papers
Affiliation :	University of Cambridge Coventry University University of Warwick
Publication Type:	Peer Reviewed
Appears in Collections:	Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation