Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints

Date Issued
May 1, 2019
Author(s)
DOI
10.1109/ISPSD.2019.8757586
Abstract
State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.
Subjects

Elevated Temperatures...

HVDC and Smart Grid

SiC IGBT

Ultra-high voltage

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