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https://hdl.handle.net/20.500.14279/32775
Πεδίο DC | Τιμή | Γλώσσα |
---|---|---|
dc.contributor.author | Tiwari, Amit K. | - |
dc.contributor.author | Udrea, Florin | - |
dc.contributor.author | Lophitis, Neophytos | - |
dc.contributor.author | Antoniou, Marina | - |
dc.date.accessioned | 2024-08-07T05:18:03Z | - |
dc.date.available | 2024-08-07T05:18:03Z | - |
dc.date.issued | 2019-05-01 | - |
dc.identifier.citation | Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2019, Volume 2019-May, Pages 175 - 178 | en_US |
dc.identifier.isbn | [9781728105796] | - |
dc.identifier.issn | 10636854 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/32775 | - |
dc.description.abstract | State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC. | en_US |
dc.language.iso | en | en_US |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Elevated Temperatures | en_US |
dc.subject | HVDC and Smart Grid | en_US |
dc.subject | SiC IGBT | en_US |
dc.subject | Ultra-high voltage | en_US |
dc.title | Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints | en_US |
dc.type | Conference Papers | en_US |
dc.collaboration | University of Cambridge | en_US |
dc.collaboration | Coventry University | en_US |
dc.collaboration | University of Warwick | en_US |
dc.journals | Open Access | en_US |
dc.country | United Kingdom | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.relation.conference | International Symposium on Power Semiconductor Devices and ICs | en_US |
dc.identifier.doi | 10.1109/ISPSD.2019.8757586 | en_US |
dc.identifier.scopus | 2-s2.0-85067648549 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85067648549 | - |
dc.relation.volume | 2019-May | en_US |
cut.common.academicyear | 2018-2019 | en_US |
dc.identifier.spage | 175 | en_US |
dc.identifier.epage | 178 | en_US |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
item.grantfulltext | open | - |
item.openairecristype | http://purl.org/coar/resource_type/c_c94f | - |
item.cerifentitytype | Publications | - |
item.openairetype | conferenceObject | - |
crisitem.author.dept | Department of Electrical Engineering, Computer Engineering and Informatics | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-0901-0876 | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
Εμφανίζεται στις συλλογές: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
Αρχεία σε αυτό το τεκμήριο:
Αρχείο | Περιγραφή | Μέγεθος | Μορφότυπος | |
---|---|---|---|---|
Operation_of_ultra-high_voltage_gt10kV_SiC_IGBTs_at_elevated_temperatures_benefits_amp_constraints.pdf | 1.37 MB | Adobe PDF | Δείτε/ Ανοίξτε |
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