1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/32775
DC FieldValueLanguage
dc.contributor.authorTiwari, Amit K.-
dc.contributor.authorUdrea, Florin-
dc.contributor.authorLophitis, Neophytos-
dc.contributor.authorAntoniou, Marina-
dc.date.accessioned2024-08-07T05:18:03Z-
dc.date.available2024-08-07T05:18:03Z-
dc.date.issued2019-05-01-
dc.identifier.citationProceedings of the International Symposium on Power Semiconductor Devices and ICs, 2019, Volume 2019-May, Pages 175 - 178en_US
dc.identifier.isbn[9781728105796]-
dc.identifier.issn10636854-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/32775-
dc.description.abstractState of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.en_US
dc.language.isoenen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectElevated Temperaturesen_US
dc.subjectHVDC and Smart Griden_US
dc.subjectSiC IGBTen_US
dc.subjectUltra-high voltageen_US
dc.titleOperation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraintsen_US
dc.typeConference Papersen_US
dc.collaborationUniversity of Cambridgeen_US
dc.collaborationCoventry Universityen_US
dc.collaborationUniversity of Warwicken_US
dc.journalsOpen Accessen_US
dc.countryUnited Kingdomen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.relation.conferenceInternational Symposium on Power Semiconductor Devices and ICsen_US
dc.identifier.doi10.1109/ISPSD.2019.8757586en_US
dc.identifier.scopus2-s2.0-85067648549-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85067648549-
dc.relation.volume2019-Mayen_US
cut.common.academicyear2018-2019en_US
dc.identifier.spage175en_US
dc.identifier.epage178en_US
item.cerifentitytypePublications-
item.openairetypeconferenceObject-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_c94f-
item.languageiso639-1en-
item.fulltextWith Fulltext-
crisitem.author.orcid0000-0002-0901-0876-
Appears in Collections:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
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