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https://hdl.handle.net/20.500.14279/32775| Title: | Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints |
| Authors: | Tiwari, Amit K. Udrea, Florin Lophitis, Neophytos Antoniou, Marina |
| Major Field of Science: | Engineering and Technology |
| Keywords: | Elevated Temperatures;HVDC and Smart Grid;SiC IGBT;Ultra-high voltage |
| Issue Date: | 1-May-2019 |
| Source: | Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2019, Volume 2019-May, Pages 175 - 178 |
| Volume: | 2019-May |
| Start page: | 175 |
| End page: | 178 |
| Conference: | International Symposium on Power Semiconductor Devices and ICs |
| Abstract: | State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC. |
| URI: | https://hdl.handle.net/20.500.14279/32775 |
| ISBN: | [9781728105796] |
| ISSN: | 10636854 |
| DOI: | 10.1109/ISPSD.2019.8757586 |
| Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International |
| Type: | Conference Papers |
| Affiliation : | University of Cambridge Coventry University University of Warwick |
| Publication Type: | Peer Reviewed |
| Appears in Collections: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Operation_of_ultra-high_voltage_gt10kV_SiC_IGBTs_at_elevated_temperatures_benefits_amp_constraints.pdf | 1.37 MB | Adobe PDF | View/Open |
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