Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/32774
Title: On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures
Authors: Perkins, S. 
Arvanitopoulos, A. 
Gyftakis, K. N. 
Lophitis, Neophytos 
Major Field of Science: Engineering and Technology
Keywords: B1505A;cascode GaN;E-mode;GaN HEMT;high temperature;power devices;static performance
Issue Date: 1-May-2018
Source: 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, 2018, Pages 174 - 178
Start page: 174
End page: 178
Conference: Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPD 
Abstract: This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.
URI: https://hdl.handle.net/20.500.14279/32774
ISBN: [9781538643921]
DOI: 10.1109/WiPDAAsia.2018.8734593
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Type: Conference Papers
Affiliation : Coventry University 
Publication Type: Peer Reviewed
Appears in Collections:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation

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