Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/33357| Title: | Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses | Authors: | Antoniou, M. Lophitis, Neophytos Udrea, F. Bauer, F. Nistor, I. Bellini, M. Rahimo, M. |
Major Field of Science: | Engineering and Technology | Keywords: | Insulated Gate Bipolar Transistor (IGBT);superjunction power MOSFET;technology trade-off | Issue Date: | 12-Jun-2015 | Source: | Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015, Vol. 2015-June, Pages 21 - 24 | Volume: | 2015-June | Start page: | 21 | End page: | 24 | Abstract: | A new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance has been demonstrated. The improvement has been achieved through the utilization of p doped buried layers (p-rings) which allows for the simultaneous increase in the n enhancement layer doping concentration above the conventional levels without compromising the device breakdown rating. This unique lateral charge compensation approach is demonstrated to be highly effective in lowering the on-state losses. The experimental results show a 20% reduction in the on-state losses for a 1.7kV device. | URI: | https://hdl.handle.net/20.500.14279/33357 | ISBN: | [9781479962594] | ISSN: | 10636854 | DOI: | 10.1109/ISPSD.2015.7123379 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Type: | Conference Papers | Affiliation : | University of Cambridge ABB Switzerland Ltd |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
CORE Recommender
This item is licensed under a Creative Commons License
