1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33357
DC FieldValueLanguage
dc.contributor.authorAntoniou, M.-
dc.contributor.authorLophitis, Neophytos-
dc.contributor.authorUdrea, F.-
dc.contributor.authorBauer, F.-
dc.contributor.authorNistor, I.-
dc.contributor.authorBellini, M.-
dc.contributor.authorRahimo, M.-
dc.date.accessioned2024-12-18T12:51:38Z-
dc.date.available2024-12-18T12:51:38Z-
dc.date.issued2015-06-12-
dc.identifier.citationProceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015, Vol. 2015-June, Pages 21 - 24en_US
dc.identifier.isbn[9781479962594]-
dc.identifier.issn10636854-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33357-
dc.description.abstractA new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance has been demonstrated. The improvement has been achieved through the utilization of p doped buried layers (p-rings) which allows for the simultaneous increase in the n enhancement layer doping concentration above the conventional levels without compromising the device breakdown rating. This unique lateral charge compensation approach is demonstrated to be highly effective in lowering the on-state losses. The experimental results show a 20% reduction in the on-state losses for a 1.7kV device.en_US
dc.language.isoenen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectInsulated Gate Bipolar Transistor (IGBT)en_US
dc.subjectsuperjunction power MOSFETen_US
dc.subjecttechnology trade-offen_US
dc.titleExperimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction lossesen_US
dc.typeConference Papersen_US
dc.collaborationUniversity of Cambridgeen_US
dc.collaborationABB Switzerland Ltden_US
dc.journalsSubscriptionen_US
dc.countryUnited Kingdomen_US
dc.countrySwitzerlanden_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1109/ISPSD.2015.7123379en_US
dc.identifier.scopus2-s2.0-84937912591-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84937912591-
dc.relation.volume2015-Juneen_US
cut.common.academicyearemptyen_US
dc.identifier.spage21en_US
dc.identifier.epage24en_US
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_c94f-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypeconferenceObject-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0901-0876-
crisitem.author.parentorgFaculty of Engineering and Technology-
Appears in Collections:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
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