Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses

Antoniou, M.; Lophitis, Neophytos; Udrea, F.; Bauer, F.; Nistor, I.; Bellini, M.; Rahimo, M.

doi:10.1109/ISPSD.2015.7123379

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Τίτλος:	Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
Συγγραφείς:	Antoniou, M. Lophitis, Neophytos Udrea, F. Bauer, F. Nistor, I. Bellini, M. Rahimo, M.
Major Field of Science:	Engineering and Technology
Λέξεις-κλειδιά:	Insulated Gate Bipolar Transistor (IGBT);superjunction power MOSFET;technology trade-off
Ημερομηνία Έκδοσης:	12-Ιου-2015
Πηγή:	Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2015, Vol. 2015-June, Pages 21 - 24
Volume:	2015-June
Start page:	21
End page:	24
Περίληψη:	A new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance has been demonstrated. The improvement has been achieved through the utilization of p doped buried layers (p-rings) which allows for the simultaneous increase in the n enhancement layer doping concentration above the conventional levels without compromising the device breakdown rating. This unique lateral charge compensation approach is demonstrated to be highly effective in lowering the on-state losses. The experimental results show a 20% reduction in the on-state losses for a 1.7kV device.
URI:	https://hdl.handle.net/20.500.14279/33357
ISBN:	[9781479962594]
ISSN:	10636854
DOI:	10.1109/ISPSD.2015.7123379
Rights:	Attribution-NonCommercial-NoDerivatives 4.0 International
Type:	Conference Papers
Affiliation:	University of Cambridge ABB Switzerland Ltd
Publication Type:	Peer Reviewed
Εμφανίζεται στις συλλογές:	Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation