Results 121-136 of 136 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12115-Oct-2004Organic photovoltaic devices based on blends of regioregular poly(3-hexylthiophene) and poly(9,9-dioctylfluorene-co-benzothiadiazole)Choulis, Stelios A. ; Kim, Youngkyoo ; Cook, Steffan 
12228-Jun-2004Charge recombination in polymer/fullerene photovoltaic devicesChoulis, Stelios A. ; Nelson, Jenny K. ; Durrant, James Robert 
12313-Jan-2004Transport and recombination dynamics studies of polymer/fullerene based solar cellsChoulis, Stelios A. ; Nelson, Jenny K. ; Tuladhar, Sachetan M. 
124Sep-2003Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasersChoulis, Stelios A. ; Tomić, Stanko S. ; O'Reilly, Eoin P O 
125Sep-2003Investigation of transport properties in polymer/fullerene blends using time-of-flight photocurrent measurementsChoulis, Stelios A. ; Nelson, Jenny K. ; Kim, Yong Rok 
126Aug-2003Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopyChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Ghosh, Sandip Kumar 
127Feb-2003High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μmChoulis, Stelios A. ; Andreev, Aleksey D. ; Merrick, Michael L. 
12830-Jan-2003The effect of pressure on the radiative efficiency of InAs based light emitting diodesChoulis, Stelios A. ; Andreev, Aleksey D. ; Merrick, Michael L. 
12930-Jan-2003Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wellsChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. 
130Jan-2003Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studiesChoulis, Stelios A. ; Tomić, Stanko S. ; O'Reilly, Eoin P O 
1312003Photovoltaic and charge recombination characteristics of regioregular poly(3-hexylthiophene)/poly(9,9′-dioctyl fluorene-co-benzothiadiazole) based solar cellsChoulis, Stelios A. ; Kim, Youngkyoo ; Cook, Steffan 
13230-Oct-2002Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studiesChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. 
1332002Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasersChoulis, Stelios A. ; Tomić, Stanko S. ; Fehse, Robin 
13419-Dec-2001Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasersChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J. 
1359-Jan-2001Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studiesChoulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn 
1362001Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectanceChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn