Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1471
Title: | The effect of pressure on the radiative efficiency of InAs based light emitting diodes | Authors: | Choulis, Stelios A. Andreev, Aleksey D. Merrick, Michael L. |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. | Major Field of Science: | Natural Sciences | Field Category: | NATURAL SCIENCES | Keywords: | Light emitting diodes;Hydrostatic pressure | Issue Date: | 30-Jan-2003 | Source: | Physica status solidi (B) Basic research, 2003, vol. 235, no. 2, pp. 312-316 | Volume: | 235 | Issue: | 2 | Start page: | 312 | End page: | 316 | Journal: | Physica status solidi (B) Basic research | Abstract: | The spontaneous emission of 3.3 μm light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type II structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type II LEDs in contrast to type I lasers where competing radiative processes appear more significant | URI: | https://hdl.handle.net/20.500.14279/1471 | ISSN: | 15213951 | DOI: | 10.1002/pssb.200301575 | Rights: | © John Wiley & Sons Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article | Affiliation: | University of Surrey | Affiliation : | Unicersity of Surrey | Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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