Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1471
Title: The effect of pressure on the radiative efficiency of InAs based light emitting diodes
Authors: Choulis, Stelios A. 
Andreev, Aleksey D. 
Merrick, Michael L. 
metadata.dc.contributor.other: Χούλης, Στέλιος Α.
Major Field of Science: Natural Sciences
Field Category: NATURAL SCIENCES
Keywords: Light emitting diodes;Hydrostatic pressure
Issue Date: 30-Jan-2003
Source: Physica status solidi (B) Basic research, 2003, vol. 235, no. 2, pp. 312-316
Volume: 235
Issue: 2
Start page: 312
End page: 316
Journal: Physica status solidi (B) Basic research 
Abstract: The spontaneous emission of 3.3 μm light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type II structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type II LEDs in contrast to type I lasers where competing radiative processes appear more significant
URI: https://hdl.handle.net/20.500.14279/1471
ISSN: 15213951
DOI: 10.1002/pssb.200301575
Rights: © John Wiley & Sons
Attribution-NonCommercial-NoDerivs 3.0 United States
Type: Article
Affiliation: University of Surrey 
Affiliation : Unicersity of Surrey 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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