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https://hdl.handle.net/20.500.14279/1383| Title: | Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studies |
| Authors: | Choulis, Stelios A. Weinstein, Bernard A. Hosea, Thomas Jeff Cockburn |
| Major Field of Science: | Engineering and Technology |
| Field Category: | Materials Engineering |
| Keywords: | Pressure;Temperature;Nitrogen |
| Issue Date: | 9-Jan-2001 |
| Source: | Physica status solidi (B) Basic research, 2001, vol. 223, no. 1, pp. 151-156 |
| Volume: | 223 |
| Issue: | 1 |
| Start page: | 151 |
| End page: | 156 |
| Journal: | Physica status solidi (B) Basic research |
| Abstract: | We report photo-modulated reflectance studies under applied pressure and variable temperature, and related calculations, that probe the influence of N-related resonant anti-bonding states on the electronic structure of dilute III–N–V quantum wells (QWs). Three InyGa1—yAs1—xNx/GaAs multiple QW samples with N contents of 0–2.5% are investigated up to 85 kbar at 300 K, and for 300–10 K at 1 atm. While the temperature dependence is only minimally affected by the N content, the pressure shifts of the intersubband transition energies depend significantly on the percentage of N. The linear pressure coefficients are much smaller than those of the InGaAs band gap. A ten-band k · p model is in broad accord with the observed pressure dependence; the predicted non-linear shift is somewhat larger than measured |
| URI: | https://hdl.handle.net/20.500.14279/1383 |
| ISSN: | 15213951 |
| DOI: | 10.1002/1521-3951(200101)223:1<151::AID-PSSB151>3.0.CO;2-E |
| Rights: | © Wiley |
| Type: | Article |
| Affiliation: | University of Surrey |
| Affiliation : | University of Surrey Philipps-University Marburg University at Buffalo |
| Publication Type: | Peer Reviewed |
| Appears in Collections: | Άρθρα/Articles |
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