Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1440
Title: Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies
Authors: Choulis, Stelios A. 
Hosea, Thomas Jeff Cockburn 
Tomić, Stanko S. 
metadata.dc.contributor.other: Χούλης, Στέλιος Α.
Major Field of Science: Natural Sciences
Field Category: Chemical Sciences
Keywords: Quantum wells;Gallium;Indium;Hydrostatic pressure
Issue Date: 30-Oct-2002
Source: Physical review B - Condensed matter and materials physics, 2002, vol. 66, no. 16, pp. 1-9
Volume: 66
Issue: 16
Start page: 1
End page: 9
Journal: Physical Review B 
Abstract: We report photomodulated reflectance measurements of several intersubband transitions for a series of as-grown InyGa1-yAs1-xNx/GaAs multiple quantum well samples as functions of hydrostatic pressure (at room temperature) and temperature (at ambient pressure). The experimental results provide support for the effects of disorder due to different nearest-neighbor N-cation configurations. The quantum well transition energies obtained from the photomodulated reflectance spectra are fitted as a function of pressure with a realistic 10 band k⋅p Hamiltonian, that includes tight-binding-based energies and coupling parameters for the N levels. The quality of match between theory and experiment confirms the theoretical model and predicts some important material parameters for dilute-N InGaAsN alloys
URI: https://hdl.handle.net/20.500.14279/1440
ISSN: 10980121
DOI: 10.1103/PhysRevB.66.165321
Rights: © The American Physical Society
Type: Article
Affiliation: University of Surrey 
Affiliation : University of Surrey 
Appears in Collections:Άρθρα/Articles

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