Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1400
Title: High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm
Authors: Choulis, Stelios A. 
Andreev, Aleksey D. 
Merrick, Michael L. 
metadata.dc.contributor.other: Χούλης, Στέλιος Α.
Major Field of Science: Engineering and Technology
Keywords: Light emitting diodes;Electroluminescence;Indium compounds;Liquid phase epitaxy;Photolithography;Pressure--Measurement
Issue Date: Feb-2003
Source: Applied physics letters, 2003, vol. 82, no. 8, pp. 1149-1151
Volume: 82
Issue: 8
Start page: 1149
End page: 1151
Journal: Applied Physics Letters 
Abstract: The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs
URI: https://hdl.handle.net/20.500.14279/1400
ISSN: 10773118
DOI: 10.1063/1.1555276
Rights: © American Institute of Physics
Attribution-NonCommercial-NoDerivs 3.0 United States
Type: Article
Affiliation: University of Surrey 
Affiliation : Unicersity of Surrey 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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