Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1400
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choulis, Stelios A. | - |
dc.contributor.author | Andreev, Aleksey D. | - |
dc.contributor.author | Merrick, Michael L. | - |
dc.contributor.other | Χούλης, Στέλιος Α. | - |
dc.date.accessioned | 2013-03-06T15:37:16Z | en |
dc.date.accessioned | 2013-05-17T05:22:58Z | - |
dc.date.accessioned | 2015-12-02T10:12:18Z | - |
dc.date.available | 2013-03-06T15:37:16Z | en |
dc.date.available | 2013-05-17T05:22:58Z | - |
dc.date.available | 2015-12-02T10:12:18Z | - |
dc.date.issued | 2003-02 | - |
dc.identifier.citation | Applied physics letters, 2003, vol. 82, no. 8, pp. 1149-1151 | en_US |
dc.identifier.issn | 10773118 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/1400 | - |
dc.description.abstract | The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.rights | © American Institute of Physics | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | Light emitting diodes | en_US |
dc.subject | Electroluminescence | en_US |
dc.subject | Indium compounds | en_US |
dc.subject | Liquid phase epitaxy | en_US |
dc.subject | Photolithography | en_US |
dc.subject | Pressure--Measurement | en_US |
dc.title | High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm | en_US |
dc.type | Article | en_US |
dc.affiliation | University of Surrey | en |
dc.collaboration | Unicersity of Surrey | en_US |
dc.journals | Hybrid Open Access | en_US |
dc.country | Cyprus | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1063/1.1555276 | en_US |
dc.dept.handle | 123456789/54 | en |
dc.relation.issue | 8 | en_US |
dc.relation.volume | 82 | en_US |
cut.common.academicyear | 2003-2004 | en_US |
dc.identifier.spage | 1149 | en_US |
dc.identifier.epage | 1151 | en_US |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | No Fulltext | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.openairetype | article | - |
crisitem.journal.journalissn | 1077-3118 | - |
crisitem.journal.publisher | American Institute of Physics | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-7899-6296 | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
Appears in Collections: | Άρθρα/Articles |
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