Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1371| Title: | Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies | Authors: | Choulis, Stelios A. Tomić, Stanko S. O'Reilly, Eoin P O |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. | Major Field of Science: | Engineering and Technology | Keywords: | Semiconductors;Modulation spectroscopy;Semiconductor lasers;Binding energy | Issue Date: | Jan-2003 | Source: | Solid state communications, 2003, vol. 125, no. 3–4, pp. 155–159 | Volume: | 125 | Issue: | 3-4 | Start page: | 155 | End page: | 159 | Journal: | Solid State Communications | Abstract: | We describe micro-photomodulated reflectance (PR) measurements on a representative dilute-N InGaNAs/GaAs-based laser device structure designed to emit at 1.3 μm. The quantum well (QW) transition energies obtained from PR are modeled using a realistic 10-band k·p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. From this we are able to determine accurately the band structure and thus predict some important device properties for this InGaNAs/GaAs-based laser device | URI: | https://hdl.handle.net/20.500.14279/1371 | ISSN: | 00381098 | DOI: | 10.1016/S0038-1098(02)00772-X | Rights: | © Elsevier Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article | Affiliation: | University of Surrey | Affiliation : | Unicersity of Surrey | Publication Type: | Peer Reviewed |
| Appears in Collections: | Άρθρα/Articles |
CORE Recommender
SCOPUSTM
Citations
18
checked on Nov 9, 2023
WEB OF SCIENCETM
Citations
50
15
Last Week
0
0
Last month
0
0
checked on Oct 21, 2023
Page view(s) 5
603
Last Week
1
1
Last month
4
4
checked on Dec 3, 2024
Google ScholarTM
Check
Altmetric
This item is licensed under a Creative Commons License
