Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1371
Title: Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies
Authors: Choulis, Stelios A. 
Tomić, Stanko S. 
O'Reilly, Eoin P O 
metadata.dc.contributor.other: Χούλης, Στέλιος Α.
Major Field of Science: Engineering and Technology
Keywords: Semiconductors;Modulation spectroscopy;Semiconductor lasers;Binding energy
Issue Date: Jan-2003
Source: Solid state communications, 2003, vol. 125, no. 3–4, pp. 155–159
Volume: 125
Issue: 3-4
Start page: 155
End page: 159
Journal: Solid State Communications 
Abstract: We describe micro-photomodulated reflectance (PR) measurements on a representative dilute-N InGaNAs/GaAs-based laser device structure designed to emit at 1.3 μm. The quantum well (QW) transition energies obtained from PR are modeled using a realistic 10-band k·p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. From this we are able to determine accurately the band structure and thus predict some important device properties for this InGaNAs/GaAs-based laser device
URI: https://hdl.handle.net/20.500.14279/1371
ISSN: 00381098
DOI: 10.1016/S0038-1098(02)00772-X
Rights: © Elsevier
Attribution-NonCommercial-NoDerivs 3.0 United States
Type: Article
Affiliation: University of Surrey 
Affiliation : Unicersity of Surrey 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

CORE Recommender
Sorry the service is unavailable at the moment. Please try again later.
Show full item record

SCOPUSTM   
Citations

18
checked on Nov 9, 2023

WEB OF SCIENCETM
Citations 50

15
Last Week
0
Last month
0
checked on Oct 21, 2023

Page view(s)

617
Last Week
8
Last month
2
checked on Feb 17, 2025

Google ScholarTM

Check

Altmetric


This item is licensed under a Creative Commons License Creative Commons