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https://hdl.handle.net/20.500.14279/1371| Τίτλος: | Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies | Συγγραφείς: | Choulis, Stelios A. Tomić, Stanko S. O'Reilly, Eoin P O |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. | Major Field of Science: | Engineering and Technology | Λέξεις-κλειδιά: | Semiconductors;Modulation spectroscopy;Semiconductor lasers;Binding energy | Ημερομηνία Έκδοσης: | Ιαν-2003 | Πηγή: | Solid state communications, 2003, vol. 125, no. 3–4, pp. 155–159 | Volume: | 125 | Issue: | 3-4 | Start page: | 155 | End page: | 159 | Περιοδικό: | Solid State Communications | Περίληψη: | We describe micro-photomodulated reflectance (PR) measurements on a representative dilute-N InGaNAs/GaAs-based laser device structure designed to emit at 1.3 μm. The quantum well (QW) transition energies obtained from PR are modeled using a realistic 10-band k·p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. From this we are able to determine accurately the band structure and thus predict some important device properties for this InGaNAs/GaAs-based laser device | URI: | https://hdl.handle.net/20.500.14279/1371 | ISSN: | 00381098 | DOI: | 10.1016/S0038-1098(02)00772-X | Rights: | © Elsevier Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article | Affiliation: | University of Surrey | Affiliation: | Unicersity of Surrey | Publication Type: | Peer Reviewed |
| Εμφανίζεται στις συλλογές: | Άρθρα/Articles |
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