Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1371
DC FieldValueLanguage
dc.contributor.authorChoulis, Stelios A.-
dc.contributor.authorTomić, Stanko S.-
dc.contributor.authorO'Reilly, Eoin P O-
dc.contributor.otherΧούλης, Στέλιος Α.-
dc.date.accessioned2013-03-06T15:26:58Zen
dc.date.accessioned2013-05-17T05:23:01Z-
dc.date.accessioned2015-12-02T10:17:39Z-
dc.date.available2013-03-06T15:26:58Zen
dc.date.available2013-05-17T05:23:01Z-
dc.date.available2015-12-02T10:17:39Z-
dc.date.issued2003-01-
dc.identifier.citationSolid state communications, 2003, vol. 125, no. 3–4, pp. 155–159en_US
dc.identifier.issn00381098-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1371-
dc.description.abstractWe describe micro-photomodulated reflectance (PR) measurements on a representative dilute-N InGaNAs/GaAs-based laser device structure designed to emit at 1.3 μm. The quantum well (QW) transition energies obtained from PR are modeled using a realistic 10-band k·p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. From this we are able to determine accurately the band structure and thus predict some important device properties for this InGaNAs/GaAs-based laser deviceen_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofSolid State Communicationsen_US
dc.rights© Elsevieren_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.subjectSemiconductorsen_US
dc.subjectModulation spectroscopyen_US
dc.subjectSemiconductor lasersen_US
dc.subjectBinding energyen_US
dc.titleDetermining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studiesen_US
dc.typeArticleen_US
dc.affiliationUniversity of Surreyen
dc.collaborationUnicersity of Surreyen_US
dc.journalsHybrid Open Accessen_US
dc.countryCyprusen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1016/S0038-1098(02)00772-Xen_US
dc.dept.handle123456789/54en
dc.relation.issue3-4en_US
dc.relation.volume125en_US
cut.common.academicyear2003-2004en_US
dc.identifier.spage155en_US
dc.identifier.epage159en_US
item.fulltextNo Fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.languageiso639-1en-
crisitem.journal.journalissn0038-1098-
crisitem.journal.publisherElsevier-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
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