Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1358
Title: Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy
Authors: Choulis, Stelios A. 
Hosea, Thomas Jeff Cockburn 
Ghosh, Sandip Kumar 
metadata.dc.contributor.other: Χούλης, Στέλιος Α.
Major Field of Science: Engineering and Technology
Field Category: ENGINEERING AND TECHNOLOGY
Keywords: Optical pumping;Erbium;Spectroscopy;Gallium arsenide;Indium compounds
Issue Date: Aug-2003
Source: IEEE photonics technology letters, 2003, vol. 15, no. 8, pp. 1026-1028
Volume: 15
Issue: 8
Start page: 1026
End page: 1028
Journal: IEEE Photonics Technology Letters 
Abstract: We report electroreflectance (ER) measurements on a dilute-N GaInNAs vertical-cavity surface-emitting laser structure, as a function of temperature T, which probe the coupling between the cavity mode (CM) and a broad quantum-well (QW) ground state exciton. The latter is not separately observable in the ER, but, by monitoring the coupled CM-QW lineshape, we show it has maximum amplitude and is anti-symmetric when the CM and QW energies coincide at a certain T/sub opt/. This predicted T/sub opt/ is confirmed by optically pumped lasing measurements on the same sample
URI: https://hdl.handle.net/20.500.14279/1358
ISSN: 10411135
DOI: 10.1109/LPT.2003.815364
Rights: © IEEE
Attribution-NonCommercial-NoDerivs 3.0 United States
Type: Article
Affiliation: Imperial College London 
Affiliation : Imperial College London 
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