Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1358
Title: | Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy |
Authors: | Choulis, Stelios A. Hosea, Thomas Jeff Cockburn Ghosh, Sandip Kumar |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. |
Major Field of Science: | Engineering and Technology |
Field Category: | ENGINEERING AND TECHNOLOGY |
Keywords: | Optical pumping;Erbium;Spectroscopy;Gallium arsenide;Indium compounds |
Issue Date: | Aug-2003 |
Source: | IEEE photonics technology letters, 2003, vol. 15, no. 8, pp. 1026-1028 |
Volume: | 15 |
Issue: | 8 |
Start page: | 1026 |
End page: | 1028 |
Journal: | IEEE Photonics Technology Letters |
Abstract: | We report electroreflectance (ER) measurements on a dilute-N GaInNAs vertical-cavity surface-emitting laser structure, as a function of temperature T, which probe the coupling between the cavity mode (CM) and a broad quantum-well (QW) ground state exciton. The latter is not separately observable in the ER, but, by monitoring the coupled CM-QW lineshape, we show it has maximum amplitude and is anti-symmetric when the CM and QW energies coincide at a certain T/sub opt/. This predicted T/sub opt/ is confirmed by optically pumped lasing measurements on the same sample |
URI: | https://hdl.handle.net/20.500.14279/1358 |
ISSN: | 10411135 |
DOI: | 10.1109/LPT.2003.815364 |
Rights: | © IEEE Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article |
Affiliation: | Imperial College London |
Affiliation : | Imperial College London |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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