Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/2925
Title: Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers
Authors: Choulis, Stelios A. 
Tomić, Stanko S. 
Fehse, Robin 
metadata.dc.contributor.other: Χούλης, Στέλιος Α.
Keywords: Electrons;Nitrogen;Quantum wells;Resonance;Gallium arsenide;Indium compounds
Issue Date: 2002
Source: IEEE 18th international semiconductor laser conference, 2002, Pages 41-42
Abstract: By measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K
URI: https://hdl.handle.net/20.500.14279/2925
ISBN: 0-7803-7598-X
DOI: 10.1109/ISLC.2002.1041108
Rights: © IEEE
Type: Book Chapter
Affiliation: University of Surrey 
Appears in Collections:Κεφάλαια βιβλίων/Book chapters

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