Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers

Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/2925

Title:	Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers
Authors:	Choulis, Stelios A. Tomić, Stanko S. Fehse, Robin
metadata.dc.contributor.other:	Χούλης, Στέλιος Α.
Keywords:	Electrons;Nitrogen;Quantum wells;Resonance;Gallium arsenide;Indium compounds
Issue Date:	2002
Source:	IEEE 18th international semiconductor laser conference, 2002, Pages 41-42
Abstract:	By measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K
URI:	https://hdl.handle.net/20.500.14279/2925
ISBN:	0-7803-7598-X
DOI:	10.1109/ISLC.2002.1041108
Rights:	© IEEE
Type:	Book Chapter
Affiliation:	University of Surrey
Appears in Collections:	Κεφάλαια βιβλίων/Book chapters

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