Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/2925
Title: | Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers |
Authors: | Choulis, Stelios A. Tomić, Stanko S. Fehse, Robin |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. |
Keywords: | Electrons;Nitrogen;Quantum wells;Resonance;Gallium arsenide;Indium compounds |
Issue Date: | 2002 |
Source: | IEEE 18th international semiconductor laser conference, 2002, Pages 41-42 |
Abstract: | By measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K |
URI: | https://hdl.handle.net/20.500.14279/2925 |
ISBN: | 0-7803-7598-X |
DOI: | 10.1109/ISLC.2002.1041108 |
Rights: | © IEEE |
Type: | Book Chapter |
Affiliation: | University of Surrey |
Appears in Collections: | Κεφάλαια βιβλίων/Book chapters |
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