Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers
Date Issued
2002
Author(s)
DOI
10.1109/ISLC.2002.1041108
Abstract
By measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K