Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/2925
DC FieldValueLanguage
dc.contributor.authorChoulis, Stelios A.en
dc.contributor.authorTomić, Stanko S.en
dc.contributor.authorFehse, Robinen
dc.contributor.otherΧούλης, Στέλιος Α.-
dc.date.accessioned2013-03-06T15:29:12Zen
dc.date.accessioned2013-05-17T05:34:11Z-
dc.date.accessioned2015-12-02T12:26:57Z-
dc.date.available2013-03-06T15:29:12Zen
dc.date.available2013-05-17T05:34:11Z-
dc.date.available2015-12-02T12:26:57Z-
dc.date.issued2002en
dc.identifier.citationIEEE 18th international semiconductor laser conference, 2002, Pages 41-42en
dc.identifier.isbn0-7803-7598-Xen
dc.identifier.urihttps://hdl.handle.net/20.500.14279/2925-
dc.description.abstractBy measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 Ken
dc.language.isoenen
dc.rights© IEEEen
dc.subjectElectronsen
dc.subjectNitrogenen
dc.subjectQuantum wellsen
dc.subjectResonanceen
dc.subjectGallium arsenideen
dc.subjectIndium compoundsen
dc.titleExperimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasersen
dc.typeBook Chapteren
dc.affiliationUniversity of Surreyen
dc.identifier.doi10.1109/ISLC.2002.1041108en
dc.dept.handle123456789/54en
item.openairetypebookPart-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_3248-
item.grantfulltextnone-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
Appears in Collections:Κεφάλαια βιβλίων/Book chapters
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