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| | Issue Date | Title | Author(s) |
| 1 | 13-Jan-2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 2 | Sep-2022 | The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor | Cao, Qinze ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Zhang, Luyang ; Baker, Guy ; Antoniou, Marina ; Lophitis, Neophytos |
| 3 | 1-Jan-2022 | Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 4 | 1-Jan-2022 | On the 3C-SiC/SiO<inf>2</inf>n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage | Lophitis, Neophytos ; Arvanitopoulos, Anastasios ; Jennings, Mike R. ; Mawby, Philip A. ; Antoniou, Marina |
| 5 | 11-Oct-2021 | 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations | Arvanitopoulos, Anastasios ; Antoniou, Marina ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos ; Lophitis, Neophytos |
| 6 | 1-Mar-2020 | A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos |
| 7 | 1-May-2019 | Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints | Tiwari, Amit K. ; Udrea, Florin ; Lophitis, Neophytos ; Antoniou, Marina |
| 8 | 1-Sep-2017 | Primary Frequency Regulation with Load-Side Participation-Part II: Beyond Passivity Approaches | Devane, Eoin ; Kasis, Andreas ; Antoniou, Marina ; Lestas, Ioannis |
| 9 | 22-Jun-2017 | On the Investigation of the "anode Side" SuperJunction IGBT Design Concept | Antoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe |
| 10 | 25-Jul-2016 | 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode | Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan |
