Results 1-5 of 5 (Search time: 0.001 seconds).

Issue DateTitleAuthor(s)Journal
113-Jan-2024Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness EnhancementAlmpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos IEEE Transactions on Industry Applications 
211-Oct-20213C-SiC-on-Si MOSFETs: Overcoming Material Technology LimitationsArvanitopoulos, Anastasios ; Antoniou, Marina ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos ; Lophitis, Neophytos IEEE Transactions on Industry Applications 
31-Mar-2020A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier DiodesArvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos IEEE Journal of Emerging and Selected Topics in Power Electronics 
41-Sep-2017Primary Frequency Regulation with Load-Side Participation-Part II: Beyond Passivity ApproachesDevane, Eoin ; Kasis, Andreas ; Antoniou, Marina ; Lestas, Ioannis IEEE Transactions on Power Systems 
522-Jun-2017On the Investigation of the "anode Side" SuperJunction IGBT Design ConceptAntoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe IEEE Electron Device Letters