Αποτελέσματα για 1-10 από 10.

Ημερομηνία ΈκδοσηςΤίτλοςΣυγγραφέας
113-Ιαν-2024Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness EnhancementAlmpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos 
2Σεπ-2022The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristorCao, Qinze ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Zhang, Luyang ; Baker, Guy ; Antoniou, Marina ; Lophitis, Neophytos 
31-Ιαν-2022Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBTAlmpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos 
41-Ιαν-2022On the 3C-SiC/SiO<inf>2</inf>n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltageLophitis, Neophytos ; Arvanitopoulos, Anastasios ; Jennings, Mike R. ; Mawby, Philip A. ; Antoniou, Marina 
511-Οκτ-20213C-SiC-on-Si MOSFETs: Overcoming Material Technology LimitationsArvanitopoulos, Anastasios ; Antoniou, Marina ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos ; Lophitis, Neophytos 
61-Μαρ-2020A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier DiodesArvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos 
71-Μαΐ-2019Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraintsTiwari, Amit K. ; Udrea, Florin ; Lophitis, Neophytos ; Antoniou, Marina 
81-Σεπ-2017Primary Frequency Regulation with Load-Side Participation-Part II: Beyond Passivity ApproachesDevane, Eoin ; Kasis, Andreas ; Antoniou, Marina ; Lestas, Ioannis 
922-Ιου-2017On the Investigation of the "anode Side" SuperJunction IGBT Design ConceptAntoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe 
1025-Ιου-20164.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anodeLophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan