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Issue DateTitleAuthor(s)
11-Sep-2019Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier DiodesArvanitopoulos, A. ; Li, F. ; Jennings, M. R. ; Perkins, S. ; Gyftakis, K. N. ; Antoniou, M. ; Mawby, Philip ; Lophitis, Neophytos 
21-Feb-2019Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon AreaAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Rahimo, M. ; Vemulapati, U. ; Corvasce, C. ; Badstuebner, U. 
31-Aug-2015Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar TransistorsAntoniou, M. ; Lophitis, Neophytos ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F. 
412-Jun-2015Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction lossesAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. 
52014The Stripe Fortified GCT: A new GCT design for maximizing the controllable currentLophitis, Neophytos ; Antoniou, M. ; Udrea, F. ; Nistor, I. ; Arnold, M. ; Wikstrom, T. ; Vobecky, J. ; Rahimo, M.