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| Issue Date | Title | Author(s) |
| 1-May-2023 | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Jan-2023 | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 5-Aug-2024 | 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance | Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina |
| 1-Sep-2024 | 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance | Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina |
| 11-Oct-2021 | 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations | Arvanitopoulos, Anastasios ; Antoniou, Marina ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos ; Lophitis, Neophytos |
| 25-Jul-2016 | 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode | Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan |
| 1-May-2018 | Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, A. ; Perkins, Samuel ; Gyftakis, K. N. ; Lophitis, Neophytos ; Jennings, M. R. ; Antoniou, Marina |
| 1-Jan-2022 | Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs | Lophitis, Neophytos ; Gammon, Peter M. ; Renz, A. Benjamin ; Dai, Tianxiang ; Tiwari, Amit K. ; Trajkovic, Tatjana ; Mawby, Philip A. ; Udrea, Florin ; Antoniou, Marina |
| 2019 | Deep p-ring trench termination | Antoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Rahimo, Munaf T. ; Vemulapati, Umamaheswara Reddy ; Corvarsce, Ciara ; Badstuebner, Uwe |
| 1-Mar-2020 | A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos |
| 18-Jan-2013 | The destruction mechanism in GCTs | Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Bauer, Friedhelm D. ; Nistor, Iulian ; Arnold, M. ; Wikstrom, Tobias ; Vobecky, Jan |
| 1-Sep-2021 | Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Antoniou, Marina ; Lophitis, Neophytos |
| 2024 | The First Optimisation of a 16 kV 4H-SiC N-Type IGCT | Qin, Ze Cao ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Antoniou, Marina ; Mawby, Phil Andrew ; Lophitis, Neophytos |
| 28-Jun-2013 | Gate commutated thyristor with voltage independent maximum controllable current | Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Nistor, Iulian ; Rahimo, Munaf T. ; Arnold, Martin ; Wikstroem, Tobias ; Vobecky, Jan |
| 1-Jul-2015 | Improving Current Controllability in Bi-Mode Gate Commutated Thyristors | Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Nistor, Iulian ; Vobecky, Jan ; Rahimo, Munaf |
| 30-Nov-2022 | Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Jan-2022 | On the 3C-SiC/SiO<inf>2</inf>n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage | Lophitis, Neophytos ; Arvanitopoulos, Anastasios ; Jennings, Mike R. ; Mawby, Philip A. ; Antoniou, Marina |
| 22-Jun-2017 | On the Investigation of the "anode Side" SuperJunction IGBT Design Concept | Antoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe |
| 1-Jul-2019 | On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes | Arvanitopoulos, Anastasios E. ; Antoniou, Marina ; Perkins, Samuel ; Jennings, Mike ; Guadas, Manuel Belanche ; Gyftakis, Konstantinos N. ; Lophitis, Neophytos |
| 1-May-2019 | Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints | Tiwari, Amit K. ; Udrea, Florin ; Lophitis, Neophytos ; Antoniou, Marina |
