Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs
Date Issued
November 30, 2022
DOI
10.1109/ECCE50734.2022.9947492
Abstract
Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the n-IGBT device structure. This paper investigates the phenomenon of unintentional turn-on occurring due to high dV/dt produced during switching transients and analyses the impact of design parameters such as the channel length, the p-well doping and the oxide thickness for their ability to suppress it.