Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/34831| Title: | Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs | Authors: | Almpanis, Ioannis Antoniou, Marina Evans, Paul Empringham, Lee Gammon, Peter Udrea, Florin Mawby, Philip Lophitis, Neophytos |
Major Field of Science: | Engineering and Technology | Keywords: | coupling noise;SiC IGBT;unintentional turn-on | Issue Date: | 30-Nov-2022 | Source: | 2022 IEEE Energy Conversion Congress and Exposition (ECCE) | Conference: | IEEE Energy Conversion Congress and Exposition | Abstract: | Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the n-IGBT device structure. This paper investigates the phenomenon of unintentional turn-on occurring due to high dV/dt produced during switching transients and analyses the impact of design parameters such as the channel length, the p-well doping and the oxide thickness for their ability to suppress it. | URI: | https://hdl.handle.net/20.500.14279/34831 | ISBN: | [9781728193878] | DOI: | 10.1109/ECCE50734.2022.9947492 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Type: | Conference Proceedings | Affiliation : | University of Nottingham University of Warwick University of Cambridge |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
CORE Recommender
This item is licensed under a Creative Commons License
