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https://hdl.handle.net/20.500.14279/34817| Title: | The destruction mechanism in GCTs | Authors: | Lophitis, Neophytos Antoniou, Marina Udrea, Florin Bauer, Friedhelm D. Nistor, Iulian Arnold, M. Wikstrom, Tobias Vobecky, Jan |
Major Field of Science: | Engineering and Technology | Keywords: | Full wafer modeling;gate-commutated thyristor (GCT);maximum controllable current (MCC);safe operating area;thyristor | Issue Date: | 18-Jan-2013 | Source: | IEEE Transactions on Electron Devices, 2013, Vol. 60, no. 2, pp. 819 - 826 | Volume: | 60 | Issue: | 2 | Start page: | 819 | End page: | 826 | Journal: | IEEE Transactions on Electron Devices | Abstract: | This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. © 1963-2012 IEEE. | URI: | https://hdl.handle.net/20.500.14279/34817 | ISSN: | 00189383 | DOI: | 10.1109/TED.2012.2235442 | Type: | Article | Affiliation : | University of Cambridge ABB Corporate Research Center Switzerland ABB Switzerland Ltd., Semiconductors |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Άρθρα/Articles |
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