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https://hdl.handle.net/20.500.14279/34789| Title: | Improving Current Controllability in Bi-Mode Gate Commutated Thyristors | Authors: | Lophitis, Neophytos Antoniou, Marina Udrea, Florin Vemulapati, Umamaheswara Arnold, Martin Nistor, Iulian Vobecky, Jan Rahimo, Munaf |
Major Field of Science: | Engineering and Technology | Keywords: | Full wafer modeling;gate commutated thyristor (GCT);maximum controllable current (MCC);safe operating area;thyristor | Issue Date: | 1-Jul-2015 | Source: | IEEE Transactions on Electron Devices, 2015, vol. 62, iss. 7, pp. 2263 - 2269 | Volume: | 62 | Issue: | 7 | Start page: | 2263 | End page: | 2269 | Journal: | IEEE Transactions on Electron Devices | Abstract: | The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized. | URI: | https://hdl.handle.net/20.500.14279/34789 | ISSN: | 00189383 | DOI: | 10.1109/TED.2015.2428994 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Type: | Article | Affiliation : | University of Cambridge ABB Switzerland Ltd |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Άρθρα/Articles |
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