Improving Current Controllability in Bi-Mode Gate Commutated Thyristors
Journal
IEEE Transactions on Electron Devices
Date Issued
July 1, 2015
DOI
10.1109/TED.2015.2428994
Abstract
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.