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| | Issue Date | Title | Author(s) | Journal |
| 1 | Aug-2003 | Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy | Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Ghosh, Sandip Kumar | IEEE Photonics Technology Letters |
| 2 | 30-Jan-2003 | Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wells | Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. | Physica status solidi (B) Basic research |
| 3 | 30-Oct-2002 | Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies | Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. | Physical Review B |
| 4 | 19-Dec-2001 | Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers | Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J. | Applied Physics Letters |
| 5 | 9-Jan-2001 | Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studies | Choulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn | Physica status solidi (B) Basic research |
| 6 | 2001 | Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectance | Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn | IEE proceedings: optoelectronics |
