Hosea, Thomas Jeff Cockburn (rp00767)

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Αποτελέσματα για 1-6 από 6.

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	Ημερομηνία Έκδοσης	Τίτλος	Συγγραφέας
1	Αυγ-2003	Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Ghosh, Sandip Kumar
2	30-Ιαν-2003	Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wells	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S.
3	30-Οκτ-2002	Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S.
4	19-Δεκ-2001	Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J.
5	9-Ιαν-2001	Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studies	Choulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn
6	2001	Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectance	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn