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https://hdl.handle.net/20.500.14279/35796| Title: | Static and Short-Circuit Performance Analysis of the 4H-SiC 3.3 kV Trench Semi-SJ MOSFET | Authors: | Melnyk, Kyrylo Renz, Arne B. Kotagama, Virendra Cao, Qinze Iosifidis, Nikolaos Gammon, Peter M. Gott, James A. Shah, Vishal A. Lophitis, Neophytos Rahimo, Munaf Nistor, Iulian Maresca, Luca Irace, Andrea Antoniou, Marina |
Major Field of Science: | Engineering and Technology | Keywords: | 4H-SiC;MOSFET;Trench;Superjunction;ShortCircuit;High voltage device;Robustness;TCAD simulation | Issue Date: | 2025 | Project: | AdvanSiC-Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids - AdvanSiC | Conference: | 2025 Energy Conversion Congress & Expo Europe (ECCE Europe) | Abstract: | This study investigates the static and Short-Circuit performance of a 3.3 kV semi-Superjunction (SJ) MOSFET using TCAD simulations, benchmarked against a fabricated conventional planar MOSFET. The proposed design is based on the cost-effective trench etching and side-wall implantation fabrication method. The analysis demonstrates a wide implantation window, defined by SC withstand time (SCWT) and maximum blocking voltage (BV) performance. Compared to the fabricated MOSFET, the proposed semi-SJ design achieves a 22% improvement in on-state resistance (Ron) and an 11% increase in maximum BV. | URI: | https://hdl.handle.net/20.500.14279/35796 | ISBN: | [9798331567521] | DOI: | 10.1109/ECCE-Europe62795.2025.11238894 | Type: | Conference Paper | Affiliation : | Cyprus University of Technology The University of Warwick mqSemi AG University of Naples Federico II |
| Appears in Collections: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
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