Static and Short-Circuit Performance Analysis of the 4H-SiC 3.3 kV Trench Semi-SJ MOSFET
Date Issued
2025
DOI
10.1109/ECCE-Europe62795.2025.11238894
Abstract
This study investigates the static and Short-Circuit performance of a 3.3 kV semi-Superjunction (SJ) MOSFET using TCAD simulations, benchmarked against a fabricated conventional planar MOSFET. The proposed design is based on the cost-effective trench etching and side-wall implantation fabrication method. The analysis demonstrates a wide implantation window, defined by SC withstand time (SCWT) and maximum blocking voltage (BV) performance. Compared to the fabricated MOSFET, the proposed semi-SJ design achieves a 22% improvement in on-state resistance (Ron) and an 11% increase in maximum BV.