Turn-off failure mechanism in large area IGCTs
Date Issued
December 28, 2011
DOI
10.1109/SMICND.2011.6095817
Abstract
The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE.