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https://hdl.handle.net/20.500.14279/34833| Title: | Turn-off failure mechanism in large area IGCTs | Authors: | Lophitis, Neophytos Antoniou, Marina Udrea, Florin Wikstrom, Tobias Nistor, Iulian |
Major Field of Science: | Engineering and Technology | Keywords: | Integrated Gate Commutated Turn-off Thyristor;Large Area SOA | Issue Date: | 28-Dec-2011 | Source: | Proceedings of the International Semiconductor Conference, 2011, CASVolume 2, Pages 361 - 364 | Volume: | 2 | Start page: | 361 | End page: | 364 | Conference: | International Semiconductor Conference, CAS | Abstract: | The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE. | URI: | https://hdl.handle.net/20.500.14279/34833 | ISBN: | [9781612841717] | DOI: | 10.1109/SMICND.2011.6095817 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Type: | Conference Proceedings | Affiliation : | University of Cambridge ABB Switzerland Ltd., Semiconductors ABB Switzerland Ltd., Corporate Research |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
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