Datasheet Based SiC MOSFET Models for Accurate Switching Waveform Prediction in Virtual Prototyping Applications
Date Issued
January 1, 2023
DOI
10.1109/DMC58182.2023.10412452
Abstract
Computationally efficient models capable of accurately capturing power semiconductor switching waveforms, accounting for the effect of circuit layout and construction, are required for virtual prototyping applications. Often these models do not exist for many devices, or do not exist in a specific simulation platform, so a generic device model that can be calibrated from freely available datasheet information is extremely useful. A new MOSFET model is proposed in this paper, the model is based on an existing model formats but is modified to correct errors that arise from the inability of these models to account for the dependence of device capacitance on Vgs. A new Vgs based correction function, that can be applied to Cgs and Cgd is described and it is shown that this model can be calibrated from the datasheet for a SiC MOSFET. The model is experimentally validated against double-pulse switching waveforms and a significant improvement in switching waveforms, over existing models without the correction function, is demonstrated.