Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements

Abstract

Metal contaminated silicon wafers were examined using nondestructive methods based on photothermal radiometry. This approach relies on measuring the blackbody radiation emitted from a material excited by a modulated laser source. Information is recovered regarding the electronic and thermal properties of the semiconductor as a function of laser modulation frequency. Data collected as a function of modulation frequency and time show clear distinctions between different samples. The sensitivity to different forms of metallic contamination is examined.