1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Άρθρα/Articles
Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1772
DC FieldValueLanguage
dc.contributor.authorKalli, Kyriacos-
dc.contributor.authorChristofidès, Constantinos-
dc.contributor.authorOthonos, Andreas S.-
dc.contributor.authorTardiff, F.-
dc.contributor.otherΚαλλή, Κυριάκος-
dc.date.accessioned2013-02-22T14:32:19Zen
dc.date.accessioned2013-05-17T05:22:35Z-
dc.date.accessioned2015-12-02T09:55:12Z-
dc.date.available2013-02-22T14:32:19Zen
dc.date.available2013-05-17T05:22:35Z-
dc.date.available2015-12-02T09:55:12Z-
dc.date.issued1999-09-
dc.identifier.citationJournal of Applied Physics,1999, vol. 86, no. 6, pp. 3064-3067en_US
dc.identifier.issn10897550-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1772-
dc.description.abstractMetal contaminated silicon wafers were examined using nondestructive methods based on photothermal radiometry. This approach relies on measuring the blackbody radiation emitted from a material excited by a modulated laser source. Information is recovered regarding the electronic and thermal properties of the semiconductor as a function of laser modulation frequency. Data collected as a function of modulation frequency and time show clear distinctions between different samples. The sensitivity to different forms of metallic contamination is examined.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rights© American Institute of Physics.en_US
dc.subjectSemiconductor dopingen_US
dc.subjectSiliconen_US
dc.subjectSurface contaminationen_US
dc.subjectNondestructive testingen_US
dc.subjectPhotothermal spectroscopyen_US
dc.titleNondestructive evaluation of metal contaminated silicon wafers using radiometric measurementsen_US
dc.typeArticleen_US
dc.collaborationUniversity of Cyprusen_US
dc.collaborationLETI (CEA - Technologies Avancées)en_US
dc.subject.categoryElectrical Engineering - Electronic Engineering - Information Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryCyprusen_US
dc.countryFranceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.371168en_US
dc.dept.handle123456789/54en
dc.relation.issue6en_US
dc.relation.volume86en_US
cut.common.academicyear1999-2000en_US
dc.identifier.spage3064en_US
dc.identifier.epage3067en_US
item.fulltextNo Fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.languageiso639-1en-
crisitem.journal.journalissn1089-7550-
crisitem.journal.publisherAmerican Institute of Physics-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-4541-092X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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