Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1624
Title: Conducting transition metal nitride thin films with tailored cell sizes: the case of δ-TixTa1−xN
Authors: Abadias, Gregory 
Lekka, Christina E. 
Koutsokeras, Loukas E. 
Major Field of Science: Engineering and Technology
Field Category: Electrical Engineering - Electronic Engineering - Information Engineering
Keywords: Cells--Growth;Liquid phase epitaxy;Metals;Nitrides;Tantalum;Molecular beam epitaxy
Issue Date: 2008
Source: Applied physics letters, 2008, vol. 93, iss. 1, pp. 1-3
Volume: 93
Issue: 1
Start page: 1
End page: 3
Journal: Applied Physics Letters 
Abstract: We present results on the stability and tailoring of the cell size of conducting δ- Tix Ta1-x N obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard's rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ- Tix Ta1-x N films (ρ =180 cm) are similar to those of TiN and TaN
URI: https://hdl.handle.net/20.500.14279/1624
ISSN: 10773118
DOI: 10.1063/1.2955838
Rights: © American Institute of Physics
Type: Article
Affiliation: University of Ioannina 
Affiliation : University of Ioannina 
Université de Poitiers 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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