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Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1624
DC FieldValueLanguage
dc.contributor.authorAbadias, Gregory-
dc.contributor.authorLekka, Christina E.-
dc.contributor.authorKoutsokeras, Loukas E.-
dc.date.accessioned2013-02-22T14:02:16Zen
dc.date.accessioned2013-05-17T05:22:29Z-
dc.date.accessioned2015-12-02T10:02:13Z-
dc.date.available2013-02-22T14:02:16Zen
dc.date.available2013-05-17T05:22:29Z-
dc.date.available2015-12-02T10:02:13Z-
dc.date.issued2008-
dc.identifier.citationApplied physics letters, 2008, vol. 93, iss. 1, pp. 1-3en_US
dc.identifier.issn10773118-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1624-
dc.description.abstractWe present results on the stability and tailoring of the cell size of conducting δ- Tix Ta1-x N obtained by film growth and ab initio calculations. Despite the limited solubility of Ta in Ti, we show that TiN and TaN are soluble due to the hybrization of the d and sp electrons of the metal and N, respectively, that stabilizes the ternary system to the rocksalt structure. The stress-free cell sizes follow the Vegard's rule; nevertheless, process-dependent stresses expand the cell size of the as-grown films. The electronic properties of δ- Tix Ta1-x N films (ρ =180 cm) are similar to those of TiN and TaNen_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© American Institute of Physicsen_US
dc.subjectCells--Growthen_US
dc.subjectLiquid phase epitaxyen_US
dc.subjectMetalsen_US
dc.subjectNitridesen_US
dc.subjectTantalumen_US
dc.subjectMolecular beam epitaxyen_US
dc.titleConducting transition metal nitride thin films with tailored cell sizes: the case of δ-TixTa1−xNen_US
dc.typeArticleen_US
dc.affiliationUniversity of Ioanninaen
dc.collaborationUniversity of Ioanninaen_US
dc.collaborationUniversité de Poitiersen_US
dc.subject.categoryElectrical Engineering - Electronic Engineering - Information Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.2955838en_US
dc.dept.handle123456789/54en
dc.relation.issue1en_US
dc.relation.volume93en_US
cut.common.academicyear2007-2008en_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypearticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.fulltextNo Fulltext-
item.grantfulltextnone-
crisitem.journal.journalissn1077-3118-
crisitem.journal.publisherAmerican Institute of Physics-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-4143-0085-
crisitem.author.parentorgFaculty of Engineering and Technology-
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