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Issue DateTitleAuthor(s)
11-Feb-2019Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon AreaAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Rahimo, M. ; Vemulapati, U. ; Corvasce, C. ; Badstuebner, U. 
21-Sep-2018Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllabilityLophitis, N. ; Antoniou, M. ; Vemulapati, U. ; Vobecky, J. ; Badstuebner, U. ; Wikstroem, T. ; Stiasny, T. ; Rahimo, M. ; Udrea, F. 
31-Apr-2016New bi-mode gate-commutated thyristor design concept for high-current controllability and low ON-state voltage dropLophitis, Neophytos ; Antoniou, M. ; Vemulapati, U. ; Arnold, M. ; Nistor, I. ; Vobecky, J. ; Rahimo, M. ; Udrea, F. 
41-Aug-2015Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar TransistorsAntoniou, M. ; Lophitis, Neophytos ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F. 
512-Jun-2015Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction lossesAntoniou, M. ; Lophitis, Neophytos ; Udrea, F. ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. 
62014The Stripe Fortified GCT: A new GCT design for maximizing the controllable currentLophitis, Neophytos ; Antoniou, M. ; Udrea, F. ; Nistor, I. ; Arnold, M. ; Wikstrom, T. ; Vobecky, J. ; Rahimo, M.