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| Ημερομηνία Έκδοσης | Τίτλος | Συγγραφέας |
| 1-Μαΐ-2023 | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Ιαν-2023 | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Ιαν-2023 | Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances | Almpanis, Ioannis ; Evans, Paul ; Li, Ke ; Lophitis, Neophytos |
| 1-Ιαν-2023 | Datasheet Based SiC MOSFET Models for Accurate Switching Waveform Prediction in Virtual Prototyping Applications | Zhang, Ziyao ; Fayyaz, Asad ; Almpanis, Ioannis ; Riache, Younes ; Valente, Giorgio ; Lophitis, Neophytos ; Evans, Paul |
| 30-Νοε-2022 | Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Ιαν-2022 | Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 13-Ιαν-2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
