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  4. Thin film optoelectronic devices using delafossite typr metal oxides and methods of their fabrication

Thin film optoelectronic devices using delafossite typr metal oxides and methods of their fabrication

Title
Thin film optoelectronic devices using delafossite typr metal oxides and methods of their fabrication
Date Issued
2015-12
Inventor(s)
Savva, Achilleas  
Choulis, Stelios A.  
Major Field of Science
Engineering and Technology
Field Category
Mechanical Engineering
Date Issued
December 2015
Link
https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151230&DB=&locale=en_EP&CC=WO&NR=2015198321A1&KC=A1&ND=1
URI
https://hdl.handle.net/20.500.14279/8959
Type
Patents
Application
WO2015IL50647 20150624
Affiliation
Cyprus University of Technology  
Reinhold Cohn and Partners  
Abstract
A novel method for fabricating delafossite type metal oxides thin films, and the novel electrically active delafossite type metal oxides thin film are presented. The method comprises: providing a liquid-phase film material comprising a solution of a precursor material having at least one metal ion source and at least one selected fuel compound in at least one selected polar solvent; and using the liquid-phase film material for fabricating a multi-layer structure comprising at least one optically active layer configured with desired optical, electronic and mechanical properties. The film material is deposited on a surface of a structure comprising the optically active layer, and a post deposition treatment is applied to the deposited film material to transform the film material into an electrically active delafossite type metal oxide film being a semi- crystalline film comprising amorphous and crystalline regions.
Subjects

Film optoelectronic

international: H01L21...

cooperative: H01L21/0...

Metal oxydes

cooperative: H01L21/0...

cooperative: H01L21/0...

cooperative: H01L21/0...

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