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  4. Insulated gate bipolar transistor including trench Schottky electrode

Insulated gate bipolar transistor including trench Schottky electrode

Title
Insulated gate bipolar transistor including trench Schottky electrode
Date Issued
2025-09-30
Inventor(s)
Udrea, Florin  
Antoniou, Marina  
Lophitis, Neophytos  
Corvasce, Chiara  
De-Michielis, Luca  
VEMULAPATI, Umamaheswara  
Badstuebner, Uwe  
Rahimo, Munaf  
Major Field of Science
Engineering and Technology
Field Category
Electrical Engineering - Electronic Engineering - Information Engineering
Date Issued
September 30, 2025
URI
https://hdl.handle.net/20.500.14279/35857
Type
Patents
Application
US17/774,555
Affiliation
Hitachi Energy Ltd  
University of Cambridge  
Subjects

H10D64/00; H10D64/111...

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