Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/34867| Title: | Parameters influencing the maximum controllable current in gate commutated thyristors | Authors: | Lophitis, Neophytos Antoniou, Marina Udrea, Florin Nistor, Iulian Arnold, Martin Wikstrom, Tobias Vobecky, Jan |
Major Field of Science: | Engineering and Technology | Keywords: | Digital communication systems;Software engineering | Issue Date: | 1-Jan-2014 | Source: | IET Computers and Digital Techniques, 2014, vol. 8, no. 3, pp. 221 - 226 | Volume: | 8 | Issue: | 3 | Start page: | 221 | End page: | 226 | Journal: | IET Computers and Digital Techniques | Abstract: | The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration. © The Institution of Engineering and Technology 2014. | URI: | https://hdl.handle.net/20.500.14279/34867 | ISSN: | 17518601 | DOI: | 10.1049/iet-cds.2013.0217 | Type: | Article | Affiliation : | University of Cambridge ABB Switzerland Ltd., Corporate Research ABB Switzerland Ltd., Semiconductors, Ch-5600 Lenzburg, Switzerland |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Άρθρα/Articles |
CORE Recommender
This item is licensed under a Creative Commons License
