Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33368
Title: Integrated Gate Commutated Thyristor: From Trench to Planar
Authors: Vemulapati, Umamaheswara 
Stiasny, Thomas 
Wikstrom, Tobias 
Lophitis, Neophytos 
Udrea, Florin 
Major Field of Science: Engineering and Technology
Keywords: discrete power semiconductor;high power semiconductor switch;IGCT;planar-gate;Thyristor;trench-gate
Issue Date: 1-Sep-2020
Source: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2020, Volume 2020-September, Pages 490 - 493
Volume: 2020-September
Start page: 490
End page: 493
Conference: International Symposium on Power Semiconductor Devices and ICs 
Abstract: The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been verified experimentally with 4.5kV devices fabricated on 4-inch Si wafers. Afterwards, the electrical characteristics of the planar IGCT were compared with that of the conventional (with trench or mesa gate) IGCT. Both the planar and the conventional IGCTs are fabricated with corrugated p-base referred to as High Power Technology (HPT) design. In addition, mixed-mode TCAD device simulations have been performed to verify the turn-off failure mechanism and to analyze the electro-thermal performance of the planar IGCT in reference to that of the conventional IGCT.
URI: https://hdl.handle.net/20.500.14279/33368
ISBN: [9781728148366]
ISSN: 10636854
DOI: 10.1109/ISPSD46842.2020.9170102
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Type: Conference Papers
Affiliation : Abb Power Grids 
University of Nottingham 
University of Cambridge 
Publication Type: Peer Reviewed
Appears in Collections:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation

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